sfh 4750 osram ostar - lighting ir 6-fold with optics (850nm) lead (pb) free produc t - rohs compliant 2010-12-15 1 wesentliche merkmale ?3.5 w optische leistung bei if=1a ? aktive chipfl?che 2.1 x 3.2 mm 2 ? max. gleichstrom 1 a ? niedriger w?rmewiderstand (3 k/w) ? emissionswellenl?nge 850 nm ? esd-sicher bis 2 kv nach jesd22-a114-b anwendungen ? infrarotbeleuchtung fr kameras ? berwachungssysteme ? ir-datenbertragung ? verkehrsberwachungssysteme ? beleuchtung fr bilderkennungssysteme ? nicht fr anwendungen im automobilbereich sicherheitshinweise je nach betriebsart emi ttieren diese bauteile hochkonzentrierte, nicht sichtbare infrarot- strahlung, die gef?hrlich fr das menschliche auge sein kann. produkte, die diese bauteile enthalten, mssen gem?? den sicherheits- richtlinien der iec-normen 60825-1 und 62471 behandelt werden. typ type bestellnummer ordering code strahlst?rke 1) ( i f = 1a, t p = 20 ms) radiant intensity 1) e (mw/sr) 1) gemessen bei einem raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr. sfh 4750 q65110a8280 > 630 (typ. 1000) features ?3.5 w optical power at if=1a ? active chip area 2.1 x 3.2 mm 2 ? max. dc-current 1 a ? low thermal resistance (3 k/w) ? spectral emission at 850 nm ? esd safe up to 2 kv acc. to jesd22-a114-b applications ? infrared illumination for cameras ? surveillance systems ? ir data transmission ? intelligent transportation systems ? machine vision systems ? not released for au tomotive applications safety advices depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. products which incorporate these devices have to follow the safety precautions given in iec 60825-1 and iec 62471.
2010-12-15 2 sfh 4750 grenzwerte t b 1) = 25 c maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t b, op , t b, stg ? 40 + 100 c sperrschichttemperatur junction temperature t j + 145 c sperrspannung reverse voltage v r 0.5 v vorw?rtsgleichstrom forward current i f 1 a sto?strom, t p = 100 s, d = 0 surge current i fsm 5 a leistungsaufnahme, power consumption p tot 12 w thermische verlustleistung thermal power-dissipation p th 9.8 w w?rmewiderstand sperrschicht / bodenplatte thermal resistance junction / base plate r thjb 3 k/w 1) t b = temperatur auf der rckseite der metallkernplati ne / temperature at the backside of the base plate. kennwerte ( t b = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength at peak emission i f = 1 a, t p = 10 ms peak 860 nm schwerpunkts-wellenl ?nge der strahlung centroid wavelength i f = 1 a, t p = 10 ms centroid 850 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 1 a, t p = 10 ms ? 30 nm abstrahlwinkel half angle ? 70 grad deg.
sfh 4750 2010-12-15 3 abmessungen der aktiven chipfl?che 1) dimension of the active chip area l b l w 2.1 3.2 mm2 schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, i f = 5 a, r l = 50 switching times, e from 10% to 90% and from 90% to 10%, i f = 5 a, r l = 50 t r , t f 10, 10 ns durchlassspannung forward voltage i f = 1 a, t p = 100 s v f 9.5 ( < 12) v gesamtstrahlungsfluss total radiant flux i f = 1 a, t p = 100 s e 3.5 w temperaturkoeffizient von i e bzw. e temperature coefficient of i e or e i f = 1 a, t p = 10 ms tc i ? 0.3 %/k temperaturkoeffizient von v f temperature coefficient of v f i f = 1 a, t p = 10 ms tc v ? 6 mv/k temperaturkoeffizient von temperature coefficient of i f = 1 a, t p = 10 ms tc , centroid + 0.3 nm/k 1) die aktive chipfl?che besteht aus 6 einzelnen chips mit je 1 x 1 mm2. the active chip area consists of 6 single chips with 1 x 1 mm2 each. kennwerte ( t b = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit
2010-12-15 4 sfh 4750 strahlst?rke 1) e radiant intensity 1) e 1) nur eine gruppe in einer verpackung seinheit (streuung kleiner 1.6:1) only one group in one packing unit (variation lower 1.6:1) bezeichnung parameter symbol werte values einheit unit sfh 4750 -ea sfh 4750 -eb strahlst?rke radiant intensity i f = 1 a, t p = 20 ms e min e max 630 1000 800 1250 mw/sr mw/sr abstrahlcharakteristik radiation characteristics i rel = f ( ? ) ohf04180 0? 20? 40? 60? 80? 100? 120? 0.4 0.6 0.8 1.0 100? 90? 80? 70? 60? 50? 0? 10? 20? 30? 40? 0 0.2 0.4 0.6 0.8 1.0 ?
sfh 4750 2010-12-15 5 relative spektrale emission relative spectral emission i rel = f ( ), t b = 25 c max. zul?ssiger durchlassstrom max. permissible forward current i f = f ( t b ), r thjb = 3 k/w 700 0 nm % ohf04132 20 40 60 80 100 950 750 800 850 i rel t i f a ohf04168 0.2 0.4 0.6 0.8 1.0 1.2 b 20 40 60 80 120 durchlassstrom forward current i f = f ( v f ), t b = 25 c, single pulse, t p = 100 s zul?ssige impulsbelastbarkeit permissible pulse handling capability i f = f ( t p ), t b = 85 c, duty cycle d = parameter ohf04166 f i v a 5 f v 10 1 10 -2 5 10 -1 5 10 0 7 9 11 13 15 0 -5 f i a t p s ohf04167 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 10 p t = d t t t p i f 0.01 0.33 0.5 0.2 0.1 0.02 d 0.005 = 0.05 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.5 1 relativer gesamtstrahlungsfluss relative total radiant flux e / e (1a) = f ( i f ), t b = 25 c, single pulse, t p = 100 s ohf03848 10 -3 a 10 1 0 10 5 5 10 -1 -2 5 10 i f 10 10 0 10 1 10 55 -2 -1 (1 a) e e
2010-12-15 6 sfh 4750 anschlusskontaktierung contacting drahttyp wire type durchmesser diameter l?tspitze solder tip temperatur temperature l?tzeit solder time awg 18 ~0.8 mm (litze; flexible wire) 3.2 mm (meisel; chisel) 250 c 350 c 16 sec. 6 sec awg 20 ~0.5 mm (litze; flexible wire) 3.2 mm (meisel; chisel) 250 c 350 c 14 sec. 5 sec awg 22 ~0.3 mm (litze; flexible wire) 3.2 mm (meisel; chisel) 250 c 350 c 9 sec. 3 sec
sfh 4750 2010-12-15 7 ma?zeichnung und ersatzschaltbild package outlines and equivalent circuit diagram ma?e in mm (inch) / di mensions in mm (inch). published by osram opto semiconductors gmbh leibnizstra?e 4, d-93055 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered.
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